We offer our Hafnium (Hf) sputtering targets in planar variations. This high-refractive-index material can be E-Beam deposited, as well as sputtered. Hafnium can also be deposited as Hafnium Dioxide (HfO2) which has its own set of applications. Hafnium and HfO2 thin-films are used and studied in the cutting edge industries of DRAM (Dynamic Random Access-Memory), Fe-FET’s (Ferroelectric Field-Effect Transistors) & it could even be a novel gate dielectric gate in MOSFET (Metal Oxide Semiconductor Field Effect Transistor) circuits. Optical qualities include anti-reflection (AR), and its high thermal threshold also makes it useful in extreme temperature thermocouple probe insulators, as well as other Thermal Barrier Coatings (TBC’s). 

Data:
Atomic Number – 72

Melting Point – 2506 K

Boiling Point – 4876 K

Industries Served:
Optical

Semiconductor

Aerospace

Industrial

Optoelectronics

Available Forms:
Sputtering Targets

Evaporation Pieces